Speakers

Learn more about our Speakers at SCAPE 2022

 

Dr. Victor Veliadis

Titel of presentation:  Accelerating Commercialization of U.S. WBG Power Electronics
Dr. Victor Veliadis is Executive Director and CTO of PowerAmerica, a WBG power semiconductor consortium. At PowerAmerica, he has managed a budget of US$146 million that he strategically allocated to 200 industria l and University projects to accelerate WBG commercialization. His educational activities have trained 410 students and engaged 4100 attendees.

Aivars Lelis
Titel of presentation: SiC MOSFET Reliability
Aivars Lelis has led the Device Reliability Physics Team at the U.S. Army Research Laboratory over the past twenty years.
 With a focus on the device reliability physics of SiC power devices for high-voltage, high-temperature, high-efficiency power conversion and conditioning for advanced Army systems.

 

Gerald Deboy 

Titel of presentation: Perspective of SiC and GaN devices in the 600V to 1200V class and their use cases in high power applications
Dr. Gerald Deboy received the M.S. and Ph.D. degree in physics from the Technical University Munich in 1991 and 1996 respectively. He joined Siemens Corporate Research and Development in 1992 and the Semiconductor Division of Siemens in 1995, which became Infineon Technologies later on.
His research interests were focused on the development of new device concepts for power electronics, especially the revolutionary COOLMOS™ technology. From 2004 onward he was heading the Technical marketing department for power semiconductors and ICs within the Infineon Technologies Austria AG. Since 2009 he is leading a business development group specializing on new fields for power electronics. He is a Sr. member of IEEE and has served as a member of the Technical Committee for Power Devices and Integrated Circuits within the Electron Device Society.
He has authored and coauthored more than 100 papers in national and international journals including contributions to three student text books. He holds currently more than 100 granted international patents and has more applications pending.

Francesco Iannuzzo

Titel of presentation: Testing for reliability of SiC MOSFETs for traction applications
 Francesco Iannuzzo is a professor at Aalborg University, Denmark. His research interests are in the field of reliability of traditional and WBG power devices, including mission-profile-based life estimation, condition monitoring, failure modelling and extreme conditions. He is author or co-author of more than 260 publications on journals and international conferences.

 

Jacek Rabkowski

Titel of presentation: Insights into the turn-off process of SiC MOSFET power modules Jacek Rabkowski is a professor at Warsaw University of Technology. His main research area is the application of WBG power devices in various areas of power electronics
(renewable energy sources, energy storage, charging stations, traction systems).

 

 

Stefanie Heinig 

Titel of presentation: Experimental Insights into the MW Range Dual Active Bridge with Silicon Carbide Devices
Stefanie Heinig received the Ph.D. degree in electrical engineering from KTH Royal Institute of Technology, Stockholm, Sweden, in 2020. Her Ph.D. thesis is on the topic of main circuits, submodules, and auxiliary power concepts for converters in HVDC grids. She joined the R&D power electronics team at Hitachi Energy in Switzerland in November 2020. Her main research interests include power converters for grid applications and grid integration of renewable energy sources.

 

Daniel Hofmann

Titel of presentation: High Temperature Performance of next Generation SiC-MOSFET 1200 V & 750 V 
Daniel is holding a diploma in condensed matter physics and joint the power electronics industry in 2011. He gained experience in die design of IGBTs and SiC-MOSFET tailored to application specific requirements as well as their utilization in advanced package technology and customer specific topologies. Furthermore, he follows and supports power loss simulations, thermal design and introduction of new technologies.

 

Peter Bennich 

Titel of presenation:  Presentation of the IEA collaboration on the promotion of WBG-materials, the IEA 4E PECTA
Peter Bennich is a senior policy advisor at the Swedish Energy Agency, working with energy efficiency policies at EU-level as well as internationally. As such, he is the Swedish representative of the IEA 4E PECTA.

 

Kyubong Yeon

Titel of presentation: Reliability issues in SiC semiconductors for automotive applications
KyuBong Yeon received his MS and PhD degrees in Electronics Engineering from Hanyang University, Seoul, Rep. of Korea, in 2000 and 2014, respectively. Since 1995, he has been with the AI-SoC R&D center, Korea Automotive Technology Institute, Pangyo, Seongnam, Rep. of Korea, where he is now an executive principal researcher. His main research interests are automotive semiconductor design and robust reliability system design.

 

Gabriele Bellocchi, Phd

Titel of presentation: Methods for controlling barrier height in SiC Schottky diodes
Gabriele Bellocchi works in the R&D group for High Power Devices at STMicroelectronics. He has a PhD in Physics from the University of Catania and was Postdoctoral Fellow at CNR-IMM, Catania. He is the co-author of two patents in the field of SiC devices and author of several papers published in ISI journals

 

Hyung-Seok Lee 
Titel of presentation: Recent progress of GaN-based semiconductor device technologies in ETRI
Hyung-Seok Lee received the B.S. and M.S. degrees in electrical engineering from Korea University, Seoul, Korea, in 2000 and 2002 , respectively, and the Tech. Lic. And Ph.D. degrees from the Royal Institute of Technology (KTH), Stockholm, Sweden, in 2005 and 2008, respectively. From 2001 to 2002, he was a Researcher with Samsung SDI Central R&D Center, Suwon, Korea. From 2007 to 2008, he was a Researcher with TranSiC AB, Swden.
From 2008 to 2013, he was a Postdoc in Massachusetts Institute of Technology (MIT)-Microsystems Technology Laboratories (MTL), Cambridge, MA, US.   In 2013, he was a Senior Researcher with Samsung Corning R&D Center, Asan, Korea. Since 2014, he has been a Principal Researcher with
Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea. His research interests include the process technology and device design of high-power devices in wide-bandgap materials. He contributed more than 60 publications including international journals and conference proceedings.

 

Hans-Peter Nee

Titel of presentation: Closing session
Hans-Peter Nee is professor of power electronics at KTH Royal Institute of Technology since 1999. His interests include grid connected power electronics and SiC power converters for various applications.

 

Martin Domeij

Titel of presentation: Performance and reliability of onsemi's new generation M3 1200 V SiC MOSFETs
Martin Domeij received Ph. D. in 1999 from KTH on the topic “Dynamic avalanche in Si and SiC power diodes”. During 1999-2000 he was postdoc at the University of Bremen. Between 2000 and 2011 he worked as researcher at KTH in the field of SiC power devices and received the Docent degree in 2006. In 2005 he was one of the founders of the SiC power device company TranSiC AB (focusing on SiC power BJTs) where he acted as CTO until TranSiC was acquired by Fairchild Semiconductor in March 2011. Martin Domeij has since 2014 worked with SiC MOSFET R&D with focus on design, device physics and electrical characterization.

  

Felix Hoffmann 

Titel of presentation: Power Cycling of SiC Power Devices – Aspects and Peculiarities
Felix Hoffmann studied electrical engineering at the University of Bremen in Germany and received the Dipl.-Ing. degree in 2013.He is currently a researcher and PhD candidate at the University of Bremen at the Institute for Electrical Drives, Power Electronics and Devices (IALB) 
. His research interests include packaging and reliability of power semiconductors and lifetime modeling for silicon carbide power devices.

 

Huai Wang

Titel of presentation: Condition and Health Monitoring – Toward WBG-based Power Electronic Converters
Huai Wang is currently Professor at Aalborg University, Denmark, where he leads the Reliability of Power Electronic Converters Group. His research addresses the fundamental challenges in modeling and validation of power electronic component failure mechanisms, and application issues in system-level predictability, condition monitoring, circuit architecture, and robustness design.

 

 

Hiroshi Yamaguchi

Titel of presentation: Recent Progress in Advanced SiC Power Device and Module
Hiroshi Yamaguchi received his B.E., M.E., and Ph.D degrees in Electrical and Electronic Engineering from Tokyo Institute of Technology in 1989, 1991, and 1994, respectively. He is now the director of Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST).

 

 

Herbert Pairitsch

Titel of presentation: UltimateGaN as an enabler of Green Applications
Master degree in electrical engineering from Graz University of Technology • Director Technology & Innovation at Infineon Technologies Austria AG.  From 1998 to 2014 head of various departments in production and R&D (several patents and publications in the field of semiconductors for power electronics) • Since then, divisional responsibility for research funding at PSS (Power & Sensor Systems), including coordination of national and international cooperative research projects in the context of energy-efficient electronics. 

 

Xibo Yuan 
Titel of presentation: Motor winding and bearing stress under fast-switching wide-bandgap devices and mitigation strategies
Xibo Yuan is a Professor in Advanced Energy Conversion at the University of Bristol, UK. He also holds the Royal Academy of Engineering/Safran Chair in Advanced Aircraft Power Generation Systems. He is the Director of the UK Centre for Power Electronics and an executive committee member of the IET Power Electronics, Machines and Drives (PEMD) technical network.

 

 

Shiori Idaka 
New Packaging Concept - Wiring Designs from Line to Surface
Shiori Idaka joined Mitsubishi Electric's Advanced Technology R&D Centre in 2002. There, she was involved in the development of various semiconductor packages, including LSIs, MEMS sensors, high-frequency and optical devices, power devices. In December 2016, she moved to the German branch of Mitsubishi Electric Europe B.V. and launched the European Research Cooperation Centre in 2017, where she is responsible for the coordinating of research and development projects on power electronics. She is also a member of the Department of Electrical Engineering at Nagoya University since 2014

 

 

Subhashish Bhattacharya 
Titel of presentation: Use of 10 kV SiC MOSFETs in converters and their performance under critical conditions
Subhashish Bhattacharya is Duke Energy Distinguished Professor in ECE department at NC State University. He is a founding faculty of NSF FREEDM Center and PowerAmerica. He was with FACTS and Power Quality Division, Westinghouse R&D and Siemens Power from 1998-2005. His research interests are Solid-State Transformers with HV SiC devices.

 

 

Stig Munk-Nielsen
Titel of presentation: Simulation including layout parasitic in the design phase of Power Modules reduces the laboratory work load
He is currently Professor at the Department of Energy Technology, Aalborg University, Denmark. Since 2008 Stig worked with circuits for monitoring of high power IGBT voltage drop for failure analysis purpose and the team managed to install monitoring systems in off-shore wind turbine in 2018. Since 2013 Stig secured funding for a die packaging team and laboratory facilities for 10 kV SiC devices and later on we did numerous application designs with GaN, Si and other SiC devices. A second version of the packaging facilities inaugurated in 2017 is a key enabler to the goal of extending the team experience with digital design framework since 2013, where the team initially included the L,C parasitic of power module layouts. In the CoDE project we hire 5 PhDs and want to extend our experience from electric, thermal design frame work to more applications but also to include mechanical wear out. The CoDE application examples include megawatt PtX converters and pump motor drive systems technology.

Anup Bhalla
Titel of presentation: Gen 4 SiCFET technology and applications
Dr. Anup Bhalla received his Ph.D. from Rensselaer Polytechnic Institute in 1995. From 2012-2021, Dr. Bhalla was Engineering Vice President at UnitedSiC, overseeing the development of Silicon Carbide Devices. In October 2021, UnitedSiC was acquired by Qorvo, where he now serves as Chief Engineer for Power Devices.

 

Per Ranstad 
Titel of presentation: Mobile X-ray with SiC
Per Ranstad was born in Högby, Sweden, 1958. He received the M.Sc. degree in electrical engineering from Lunds Institute of Technology, Lund, Sweden, in 1987, the Ph.D. degree in electrical engineering from the Royal Institute of Technology, Stockholm, Sweden, in 2010. Per has been leading industrial R&D activities related to energy efficient power converters, since 1985 and application of wbg-devices in products during the last 10 years. Since 2021 he is a professor in Mechatronics at Linneaus University, Växjö Sweden. Per is author and co-author of more than 50 publications and patents in the area of power electronics and electrostatic precipitators.

 

 

Keijo Jacobs 
Titel of presentation: Performance of Charge-Carrier-Lifetime-Tailored High-Voltage SiC PiN Diodes
Keijo Jacobs is a postdoctoral fellow working in the field of modeling and stability analysis in voltage source converter-based power systems at the Industrial Research Chair on Multi Time-Frame Simulation of Transients for Large-Scale Power Systems at Polytechnique Montréal, Canada. He received the B.Sc. degree in electrical engineering, information technology, and computer engineering and the M.Sc. degree in electrical power engineering from RWTH Aachen University, Aachen, Germany, in 2011 and 2015, respectively. In 2020 he received the Ph.D. degree on the topic of “Silicon-Carbide-Based High-Voltage Submodules for HVDC Voltage-Source Converters” from KTH Royal Institute of Technology, Stockholm, Sweden.

 

Ole Christian Spro
Titel of presentation: Design and Optimisation of an Auxiliary Power Supply with Medium-Voltage Isolation Using GaN HEMTs
Dr. Spro received his MSc and PhD degrees in electrical power engineering from NTNU, Norway, in 2013 and 2020. Currently working at UBIQ Aerospace as lead electrical engineer. From 2013 to 2022, he was researcher at SINTEF Energy Research. His research interests include high-frequency power converters and reliability of power semiconductor devices.

 

 

 

Carl-Mikael Zetterling
Titel of presentation: Presentation of the IEA collaboration on the promotion of WBG-materials, the IEA 4E PECTA
Carl-Mikael Zetterling is a professor of solid state electronics at KTH Royal Institute of Technology since 2005. His field of research is process technology and device design of high voltage power devices and high temperature radiation hard analog and digital integrated circuits in SiC. He is an Editor for IEEE Journal of Electron Devices Society and IEEE Fellow for contributions to SiC devices.

 

 

Sohail Khan
Titel of presentation: Integrated WBG Technology (Solutions) at the center of Clean Energy Revolution
Sohail Khan joined II-VI Incorporated in October 2020 as Executive Vice President, New Ventures & Wide-Bandgap Electronics Technologies. As the leader of this new organization, Sohail is responsible for consolidating II-VI’s deep technology expertise in silicon carbide (SiC) substrates, advanced wide-bandgap epitaxy, device fabrication, and module design. Prior to joining II-VI, Sohail was the Managing Partner for K5 Innovations. His previous positions include CEO for ViXS Systems, a UHD video solutions semiconductor company; CEO of Lilliputian Systems, a fuel-cell company; CEO of SiGe Semiconductor, pioneer in delivering Silicon based RF front end solutions; EVP of the Infrastructure Group at Agere Systems, IC & Optical solutions for Data/Telecom Networks; and President of the IC Division of Lucent Microelectronics. Sohail holds an MBA from the University of California, Berkeley, and a BSEE from the University of Engineering, Lahore.

 

Elena Barbarini
Titel of presenation: Technical and Cost state of the art of SiC & GaN power devices
Elena Barbarini is Director, Semiconductor Devices Department, at System Plus Consulting. Elena manages the production of reverse costing reports and is responsible for the development of the industrial and technical expertise of the semiconductor devices team. Prior to System Plus Consulting, she had relevant experience at Alten, Osai and Vishay. Elena holds a master’s degree in Micro & Nanotechnologies and a PhD in Power Electronics.

 

Mats Wårdemark
Titel of presenation: Use of SiC MOSFET's in DC/DC converters
Mats Wårdemark and Powerbox International AB have worked with custom designed power supplies for industrial and railway market during more than 20 years. During the last four years, Powerbox have been involved in several research projects there SiC MOSFET’s have been used.

 

Farhan Akram
Titel of presenation: Gate driver solutions for high power density SMPS using Silicon Carbide MOSFETs
I am a Hardware Design Engineer at Volvo cars, Finished master’s program at the Department of Electronics design, Mid Sweden University, Sweden. I received my BS (Electrical and Electronics Engineering) degree in 2017, from Near East University, North Cyprus. His research interest mainly lies in power electronics, gate drivers, three-phase inverters, and switch-mode power supplies.

 

Magnus Pihl
Titel of presentation: TBD

 

Felix Steiner

Titel of presentation: GaAs power diodes and the challenges of packaging and handling such devices
Studied mechanical engineering at the Karlsruhe Institute of Technology and started his Ph.D. in 2021 at the Institute for Data Processing and Electronics, also at KIT, in the group for Electronics packaging and Interconnects. His main research topics are pressureless sintering and packaging options for GaAs power diodes.