13 May

09:00 - 09:30

Registration & coffee

13 May

09:30 - 11:30

Introduction to design of SiC Power Converters | Speakers: Hans-Peter Nee, KTH & Per Ranstad, LNU |

13 May

11:30 - 12:30

Lunch

13 May

12:30 - 14:00

Continuation: Introduction to design of SiC Power Converters

13 May

14:00 - 14:30

Coffee

13 May

14:30 - 16:00

Continuation: Introduction to design of SiC Power Converters

13 May

16:00

End of tutorial

14 May

17:00 - 17:40

Material development

14 May

16:50 - 17:00

Break

14 May

18:50 - 19:30

Break

14 May

10:40 - 11:00

Coffee Break

14 May

15:10 - 15:30

Coffee Break

14 May

19:30

Dinner

14 May

12:00 - 13:30

Lunch & Exhibition

14 May

09:00 - 09:30

Registration

14 May

11:20 - 12:00

SiC and GaN devices

14 May

13:30 - 14:50

SiC and GaN devices

14 May

17:40 - 18:20

Reliability

14 May

09:40 - 10:00

Strategic Initiatives

14 May

11:00 - 11:20

Continuation: Strategic Initiatives

14 May

09:30 - 09:40

Welcome | Mietek Bakowski, RISE

14 May

18:20 - 18:50

WBG PC Annual Awards

14 May

15:30 - 16:50

Modeling and design

15 May

09:00 - 10:20

Applications

15 May

10:40 - 11:40

Applications

15 May

16:00

End of workshop

15 May

11:40 - 12:00

Market & Roadmap

15 May

14:10 - 14:30

Applications

15 May

13:20 - 14:10

Panel Discussion

15 May

10:20 - 10:40

Coffee Break

15 May

14:30 - 14:50

Coffee Break

15 May

12:00 - 13:20

Lunch & Exhibition

15 May

14:50 - 15:50

Packaging technologies

15 May

15:50 - 16:00

Closing remarks | Hans-Peter Nee, KTH Royal Institute of Technology

17:00 - 17:20	Jimmy Thornberg, STMicroelectronics	“Crystal growth, characterization and defects in 200 mm SiC wafers”
17:20 - 17:40	Johan Ekman, Kisab	"BPD free 4H-SiC 6" & 8" substrates grown by the FSGP-M process

11:20 - 11:40	Daniel Hofmann, Wolfspeed	“SiC on its way to conquer eMobility”

11:40 - 12:00	Martin Domeij, On Semiconductor	”Low on-resistance 1200 V SiC MOSFETs”

13:30 - 13:50	Simone Rascuna', ST	”ST Silicon Carbide Technologies to Enhance Power System Efficiency”

13:50 - 14:10	Francis Chai, Coherent	”A rugged and cost-effective SiC MOSFET technology”

14:10 - 14:30	Dilder Chowdhury, Nexperia	”Power GaN technology for Automotive and high current applications”

14:30 - 14:50	Christiam Gasparini, Innoscience	”GaN Power devices: reducing size, increasing performance while lowering system cost of power conversion systems”

14:50 - 15:10	Shubhangi Bhadoria, KTH	”Over-current capability of SiC MOSFETs”

09:40 - 10:00	Victor Veliadis, Power America	”PowerAmerica Accelerates SiC Commercialization”

10:00 - 10:20	Shinsuke Harada, AIST	”Strategy for SiC and GaN power devices development in AIST”

10:20 - 10:40	Lubing Zhao, CASA	”The Development Status and Opportunities of Wide Bandgap Semiconductor Industry in China”

15:30 - 15:50	Dimosthenis Peftitsis, NTNU	”Real-time SiC MOSFET device models”

15:50 - 16:10	Konstantin Kostov, RISE	”Modeling of Power Modules”

16:10 - 16:30	Saeed Akbari, RISE	”Lifetime modeling of Power Modules”

16:30 - 16:50	Khizra Abbas, KTH	”Zero-voltage switched SiC MOSFET inverter for EV drives”

17:40 - 18:00	Anant Agarwal, Ohio State Univ.	“Effective Screening methods for SiC power mosfets to achieve <10 ppm failure rates”

18:00 - 18:20	Josef Lutz, Chemnitz Univ.	“Reliability Testing of SiC Power Semiconductor Devices Respecting Package-Die Interactions”

18:00 - 18:10	Per Ranstad, WBG Power Center	“Introduction”

09:00 - 09:20	Kooros Moaber, Volvo Car	“Traction Inverter Technology Trend and WBG Devices”

09:20 - 09:40	Johan Hellsing, Heart	”Adoption of SiC technology in an aeronautical application”

09:40 - 10:00	Ninos Poli, Scania	"The use of WBG semiconductors in Scania’s products"

10:00 - 10:20	Kenneth Svensson, KraftpowerCon	”High Power DCDC converter for Fuel Cell applications”

10:40-11:00	Rafal Kopacz, Warsaw Univ. of Technology	"Advanced 1,5 kV DC charging system based on SiC technology"

11:00 - 11:20	Young-Jin Kim, Revotech	“PTC system for electric car with SiC Mosfets”

11:20 - 11:40	Klas-Håkan Eklund, Comheat	”New Silicon based power devices will compete with SiC and GaN devices”

11:40 - 12:00	Elena Barbarini, Yole Group	“GaN & SiC power device – Technology & Market overview”

14:10 - 14:30	Idaka Shiori, Mitsubishi	“SiC Solutions for Railways: Efficiency Challenges in High Reliability Applications”

13:20 - 14:10	Chair: Elena Barbarini, Yole Group Panelists: Gottwald Thomas (Schweitzer), Goessler Michael (AT&S), Dieter Liesabeth (ViSiC), Kooros Moabber (Volvo Car), Daniel Hofmann (Wolfspeed), Victor Vieliadis (PowerAmerica)	“Power Module Packaging Technologies & Designs: actual solutions and future trends"

14:50 - 15:10	Dieter Liesabeth, ViSiC	“GaN power devices and power modules”

15:10 - 15:30	Thomas Gottwald, Schweizer	”Embedding of SiC Mosfet into a PCB”

15:30 - 15:50	Michael Goessler, AT&S	“Under the surface embedding for automotive and industrial applications“

18:10 - 18:30	WBG PC Annual Awards